Paper Title:
Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films
  Abstract

Growth of 3C-SiC films on an off-axis (111) Si substrate, with a miscut of 4° towards the <110> direction, is here reported. An extensive material characterization has been conducted by means of Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD) and Raman spectroscopy, indicating a very promising film quality with extremely flat surface and interface. Notwithstanding the excellent film quality, the wafer bow is still limiting its full employment in device realization.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
167-170
DOI
10.4028/www.scientific.net/MSF.645-648.167
Citation
A. Severino, M. Camarda, N. Piluso, M. Italia, G. Condorelli, M. Mauceri, G. Abbondanza, F. La Via, "Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films", Materials Science Forum, Vols. 645-648, pp. 167-170, 2010
Online since
April 2010
Export
Price
$32.00
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