Paper Title:
Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method
  Abstract

In this work we present the growth of 4H-SiC crystals (2 inch in diameter) on the 8° off- axis C-face 6H-SiC seeds, inclined toward [11-20] direction. The growth of crystals by physical vapour transport method (PVT) was realized with the open seed backside in the experimental setup with graphite resistive heater. Some of the crystals were doped with cerium in the purpose of the 4H polytype growth stabilization. For Ce-doped crystals the seed backside carbonization process was decreased in comparison with such effect observed in the undoped SiC crystals.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
17-20
DOI
10.4028/www.scientific.net/MSF.645-648.17
Citation
E. Tymicki, K. Grasza, K. Racka, M. Raczkiewicz, T. Łukasiewicz, M. Gała, K. Kościewicz, R. Diduszko, R. Bożek, "Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method", Materials Science Forum, Vols. 645-648, pp. 17-20, 2010
Online since
April 2010
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Price
$32.00
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