Paper Title:
Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates
  Abstract

We report the results of a systematic investigation performed to reduce the residual n-type doping level of the 3C-SiC layers grown by the VLS mechanism on 6H-SiC(0001) on-axis substrate. This new approach, termed “High purity VLS” leads to low doped and low compensated material, which was confirmed by Raman and Low Temperature Photoluminescence spectroscopy. The resultant 3C morphology remains typical of single-domain layers and the n-type doping level could be estimated around 6x1016 cm-3.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
171-174
DOI
10.4028/www.scientific.net/MSF.645-648.171
Citation
J. Lorenzzi, G. Zoulis, O. Kim-Hak, N. Jegenyes, D. Carole, F. Cauwet, S. Juillaguet, G. Ferro, J. Camassel, "Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates", Materials Science Forum, Vols. 645-648, pp. 171-174, 2010
Online since
April 2010
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$32.00
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