Paper Title:
Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
  Abstract

Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature photoluminescence studies, we demonstrate a low level of residual (n and/or p-type) doping with weak compensation, which is confirmed by secondary ion mass spectroscopy in the case of p-type samples.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
179-182
DOI
10.4028/www.scientific.net/MSF.645-648.179
Citation
G. Zoulis, J. W. Sun, M. Beshkova, R. Vasiliauskas, S. Juillaguet, H. Peyre, M. Syväjärvi, R. Yakimova, J. Camassel, "Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy", Materials Science Forum, Vols. 645-648, pp. 179-182, 2010
Online since
April 2010
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$32.00
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