Paper Title:
Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
  Abstract

3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000°C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied by reciprocal space map (RSM) which shows that double positions domains exists.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
183-186
DOI
10.4028/www.scientific.net/MSF.645-648.183
Citation
M. Beshkova, J. Lorenzzi, N. Jegenyes, J. Birch, M. Syväjärvi, G. Ferro, R. Yakimova, "Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates", Materials Science Forum, Vols. 645-648, pp. 183-186, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jin She Yuan, Ming Yue Wang, Guo Hao Yu
Abstract:Low-temperature plasma deposition of diamond-like carbon (DLC) and gallium nitride thin-films grown on Si substrate by PECVD was investigated...
353
Authors: Giovanni Attolini, Matteo Bosi, Francesca Rossi, Bernard Enrico Watts, Giancarlo Salviati, Gábor Battistig, László Dobos, Béla Pécz
Abstract:3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging between 1100 to 1250°C. XRD, TEM, AFM, and SEM...
139
Authors: Jens Eriksson, Fabrizio Roccaforte, Ming Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Vito Raineri
Abstract:Defects in cubic silicon carbide (3C-SiC) epilayers, that were grown using different techniques and on different substrates, were studied in...
273
  | Authors: M.S. Rahim, Mohd Zainizan Sahdan, Jais Lias
Chapter 5: Nanoelectronic Engineering
Abstract:Titanium is a lightweight metal with an outstanding combination of properties which make it the material of choice for many different...
744
Authors: Louise Lilja, Jawad Ul Hassan, Erik Janzén, Peder Bergman
1.2 Epitaxial and Thin Films Growth
Abstract:4H-SiC epilayers with very smooth surfaces were grown with high growth rates on 4° off-cut substrates using standard silane/propane...
209