Paper Title:
SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition
  Abstract

Growth of SiC nanowires on commercial 4H-SiC substrates by chemical vapor deposition is reported. The main objective was to explore a possibility of reproducing the substrate polytype in order to obtain SiC NWs specifically composed of the hexagonal 4H-SiC polytype. The growth experiments were conducted in a hot-wall CVD reactor with H2 as the carrier gas, SiCl4 as the silicon source, and CH3Cl as the carbon source. Vapor-liquid-solid (VLS) growth mode was enabled by using metal nano-particle on the surface of the 4H-SiC substrates. Formation of nanowires or bigger nano-cones was achieved depending on the temperature and the metal catalyst used. Only SiC phase with no presence of Si was confirmed by X-ray diffraction for the growth temperatures down to 1050°C. The low temperature photoluminescence spectra measured on as-grown NWs showed clear 4H-SiC nitrogen bound excitons in some of the samples, particularly when in-situ N2 doping was used. The density of stacking faults detected by TEM strongly depended on the growth conditions.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
187-190
DOI
10.4028/www.scientific.net/MSF.645-648.187
Citation
B. Krishnan, S. P. Kotamraju, S. G. Sundaresan, Y. Koshka, "SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition", Materials Science Forum, Vols. 645-648, pp. 187-190, 2010
Online since
April 2010
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$32.00
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