Paper Title:
Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
  Abstract

The temperature dependence of the carrier lifetime was measured in n-type 4H-SiC epilayers of varying Z1/2 deep defect concentrations and layer thicknesses in order to investigate the recombination processes controlling the carrier lifetime in low- Z1/2 material. The results indicate that in more recently grown layers with lower deep defect concentrations, surface recombination tends to dominate over carrier capture by other bulk defects. Low-injection lifetime measurements were also found to provide a convenient method to assess the surface band bending and surface trap density in samples with a significant surface recombination rate.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
203-206
DOI
10.4028/www.scientific.net/MSF.645-648.203
Citation
P. B. Klein, R. L. Myers-Ward, K. K. Lew, B. L. VanMil, C. R. Eddy, D. K. Gaskill, A. Shrivastava, T. S. Sudarshan, "Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers", Materials Science Forum, Vols. 645-648, pp. 203-206, 2010
Online since
April 2010
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