Paper Title:
Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals
  Abstract

We applied time-resolved free carrier absorption (FCA) to monitor non-equilibrium carrier dynamics in 4H epilayers and 3C SiC bulk crystals at excess carrier densities in the N = 1017 - 1019 cm-3 range. The numerical fitting of FCA decay kinetics provided the linear and nonlinear carrier recombination rates in the 40-390 K range and the absorption cross-sections eh at 1064 nm. In 4H, the decrease of the bulk lifetime (800 ns) with excitation provided the bimolecular and Auger coefficients B=(1.2±0.4)×10-12 cm3/s and C=(7±4)×10-31cm6/s, respectively, at room temperature. These values for 3C were 55-150 ns, (2.0±0.4)×10-12 cm3/s, and (2±1)×10-32 cm6/s, respectively. The rate of linear and nonlinear recombination increased at lower temperatures. A value of eh =4.4×10-18 cm2 for 3C SiC at 1.064 m was found 2.3 times smaller than that for 4H SiC.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
215-218
DOI
10.4028/www.scientific.net/MSF.645-648.215
Citation
K. Jarašiūnas, P. Ščajev, V. Gudelis, P. B. Klein, M. Kato, "Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals ", Materials Science Forum, Vols. 645-648, pp. 215-218, 2010
Online since
April 2010
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$32.00
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