Paper Title:
On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures
  Abstract

Photoelectric properties of 3C sublimation-grown epitaxial layers with different structural quality were studied by using time-resolved picosecond transient grating and free carrier absorption techniques. The layer quality was described by a parameter LTW which gives the total length of twin boundaries in a layer. Optical measurements of diffusion coefficients and carrier lifetimes in wide excess carrier density (N >1018 cm-3) and temperature range (10 K to 300 K) revealed the twin defect density dependent ambipolar mobility value at RT as well as essentially different temperature dependences of mobility of the layers. The larger value of absorption cross section in more defective layer at 1064 nm wavelength pointed out to contribution of defect-assisted absorption, which gradually vanished after the filling defect states by free carriers.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
219-222
DOI
10.4028/www.scientific.net/MSF.645-648.219
Citation
A. Kadys, P. Ščajev, G. Manolis, V. Gudelis, K. Jarašiūnas, P. L. Abramov, S. P. Lebedev, A. A. Lebedev, "On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures", Materials Science Forum, Vols. 645-648, pp. 219-222, 2010
Online since
April 2010
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$32.00
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