Increase of SiC Substrate Resistance Induced by Annealing
|Periodical||Materials Science Forum (Volumes 645 - 648)|
|Main Theme||Silicon Carbide and Related Materials 2009|
|Edited by||Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller|
|Citation||Thomas L. Straubinger et al., 2010, Materials Science Forum, 645-648, 223|
|Online since||April, 2010|
|Authors||Thomas L. Straubinger, Richard L. Woodin, T. Witt, J. Shovlin, Gary M. Dolny, P. Sasahara, Erwin Schmitt, Arnd Dietrich Weber, Jeff B. Casady, Janna R. B. Casady|
We report here an anisotropic increase in SiC bulk resistivity by annealing at 1150 °C, and discuss the implications for SiC devices. The increase in resistivity is resistivity dependent and can be (at least) partially reversed by a subsequent anneal at higher temperature. Ideal device performance is achievable with appropriate annealing steps during device processing.