Paper Title:
Increase of SiC Substrate Resistance Induced by Annealing
  Abstract

We report here an anisotropic increase in SiC bulk resistivity by annealing at 1150 °C, and discuss the implications for SiC devices. The increase in resistivity is resistivity dependent and can be (at least) partially reversed by a subsequent anneal at higher temperature. Ideal device performance is achievable with appropriate annealing steps during device processing.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
223-226
DOI
10.4028/www.scientific.net/MSF.645-648.223
Citation
T. L. Straubinger, R. L. Woodin, T. Witt, J. Shovlin, G. M. Dolny, P. Sasahara, E. Schmitt, A. D. Weber, J. B. Casady, J. R. B. Casady, "Increase of SiC Substrate Resistance Induced by Annealing", Materials Science Forum, Vols. 645-648, pp. 223-226, 2010
Online since
April 2010
Keywords
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Michael R. Jennings, Amador Pérez-Tomás, D. Walker, Lin Zhu, Peter A. Losee, W. Huang, S. Balachandran, Owen J. Guy, James A. Covington, T. Paul Chow, Philip A. Mawby
Abstract:In this work, we have investigated triple and innovative multiple stacked contacts onto ptype SiC in order to evaluate whether or not there...
697
Authors: Bang Hung Tsao, Jacob W. Lawson, James D. Scofield, Javier Francisco Baca
Abstract:Improved AlNi-based ohmic contacts to p-type 4H-SiC have been achieved using low energy ion (Al+)implantation, the addition of a thin Ti...
729
Authors: Christian T. Banzhaf, Michael Grieb, Martin Rambach, Anton J. Bauer, Lothar Frey
Chapter IV: SiC Devices and Circuits
Abstract:This study focuses on the evaluation of different post-trench processes (PTPs) for Trench-MOSFETs. Thereto, two different types of inert gas...
753
Authors: Nadeemullah A. Mahadik, Robert E. Stahlbush, Eugene A. Imhoff, M.J. Tadjer, G.E. Ruland, C.A. Affouda
1.2 Epitaxial and Thin Films Growth
Abstract:Basal Plane Dislocations (BPD) intersecting the SiC substrate surface were converted to threading edge dislocations (TED) by high temperature...
233