Increase of SiC Substrate Resistance Induced by Annealing |
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| Journal | Materials Science Forum (Volumes 645 - 648) |
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| Volume | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 223-226 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.223 |
| Citation | Thomas L. Straubinger et al., 2010, Materials Science Forum, 645-648, 223 |
| Online since | April, 2010 |
| Authors | Thomas L. Straubinger, Richard L. Woodin, T. Witt, J. Shovlin, Gary M. Dolny, P. Sasahara, Erwin Schmitt, Arnd Dietrich Weber, Jeff B. Casady, Janna R. B. Casady |
| Keywords | Stacking Fault |
| Abstract | We report here an anisotropic increase in SiC bulk resistivity by annealing at 1150 °C, and discuss the implications for SiC devices. The increase in resistivity is resistivity dependent and can be (at least) partially reversed by a subsequent anneal at higher temperature. Ideal device performance is achievable with appropriate annealing steps during device processing. |
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