Paper Title:
Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC
  Abstract

In this work we present the results of electrical characterization of 4H-SiC power Schottky diodes with a Mo metal barrier for high power applications. A comparison between different Schottky Barrier Height (SBH) evaluation methods (capacitance-voltage and current-voltage measurements), together with the comparison with other authors’ works, indicates that thermionic current theory is the dominant transport mechanism across the barrier from room temperature (RT) to 450K, while at T < 300K some anomalies in J-V curves appear and SBH and ideality factor significantly change their values. These deviations from ideality are attributed to Schottky barrier inhomogeneities. In particular, a model based on two SBHs seems appropriate to properly describe the electrical behavior of our devices.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
227-230
DOI
10.4028/www.scientific.net/MSF.645-648.227
Citation
M. Naretto, D. Perrone, S. Ferrero, L. Scaltrito, "Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 227-230, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Fabrizio Roccaforte, Francesco La Via, Vito Raineri, R. Pierobon, E. Zanoni
869
Authors: Dietrich Stephani, Reinhold Schörner, Dethard Peters, Peter Friedrichs
Abstract:We have carefully investigated a number of more than 120 selected chips fabricated on one wafer, by I-V measurements at two different...
1147
Authors: Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Valeria Puglisi, Vito Raineri
Abstract:In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and...
1341
Authors: C. Koliakoudakis, J. Dontas, S. Karakalos, M. Kayambaki, S. Ladas, G. Konstantinidis, S. Kennou, Konstantinos Zekentes
Abstract:The behavior of 200nm Cr Schottky contacts on n-type 4H-SiC has been investigated with photoelectron spectroscopy (XPS) and standard (I-V and...
651
Authors: Min Seok Kang, Jung Ho Lee, Anders Hallén, Carl Mikael Zetterling, Wook Bahng, Nam Kyun Kim, Sang Mo Koo
Chapter 5: Processing of SiC
Abstract:We investigated the effect of the metal work-function and doping concentration on the barrier height of Ni-contacts with embedded...
857