Paper Title:
Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions
  Abstract

An alternative approach based on non-equilibrium free-carrier density measurements was used to characterize the fundamental absorption edge of 3C-SiC at room and 77 K temperatures. At 77 K temperature the extracted absorption edge compared well to the previous literature data revealing characteristic thresholds due to the phonon emission assisted transitions. At room temperature the absorption tail due to the phonon absorption assisted transition was revealed up to the value of 0.01 cm-1 exceeding the previous 5 cm-1 limit induced by unintentional sample doping.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
231-234
DOI
10.4028/www.scientific.net/MSF.645-648.231
Citation
V. Grivickas, K. Gulbinas, P. Grivickas, G. Manolis, J. Linnros, "Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions", Materials Science Forum, Vols. 645-648, pp. 231-234, 2010
Online since
April 2010
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Price
$32.00
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