Paper Title:
Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide
  Abstract

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltage characteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 m was obtained for fs-laser modified area.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
239-242
DOI
10.4028/www.scientific.net/MSF.645-648.239
Citation
T. Tomita, M. Iwami, M. Yamamoto, M. Deki, S. Matsuo, S. Hashimoto, Y. Nakagawa, T. Kitada, T. Isu, S. Saito, K. Sakai, S. Onoda, T. Ohshima, "Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide", Materials Science Forum, Vols. 645-648, pp. 239-242, 2010
Online since
April 2010
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$32.00
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