Paper Title:
Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration
  Abstract

Calculations of lattice constant of 4H-SiC and diamond have been carried out. Lattice constant of 4H-SiC trends to decrease when nitrogen concentration increases. On the other hand, lattice constant of 4H-SiC trends to increase when aluminum concentration increases. Lattice constant of boron and phosphorus doped diamond trends to increase when impurity concentration increases. The effect of phosphorus on diamond lattice constant is about six times larger than that of boron.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
247-250
DOI
10.4028/www.scientific.net/MSF.645-648.247
Citation
T. Matsumoto, S. I. Nishizawa, S. Yamasaki, "Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration", Materials Science Forum, Vols. 645-648, pp. 247-250, 2010
Online since
April 2010
Keywords
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Price
$32.00
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