Paper Title:
Status of 3" 6H SiC Bulk Crystal Growth
  Abstract

In this paper, we report on the current status of our technology for the commercial production of 3” 6H-SiC substrates, including PVT growth [1] of more than 3” diameter and up to 20 mm long 6H-SiC boules, post-growth processing of the boules, and characterization of the produced wafers. We discuss the preparation of SiC sources and seeds, the initial transient stage of the growth, the distribution of temperature in the growth crucible, and the Si/C ratio in the vapor. Special attention is given to the rise of the process stability and the reduction of crystallographic defects, including micropipes (open core screw dislocations), low-angle grain boundaries, foreign polytype inclusions, and graphite inclusions [2,3].

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
25-28
DOI
10.4028/www.scientific.net/MSF.645-648.25
Citation
Y. N. Makarov, D.P. Litvin, A.V. Vasiliev, A.S. Segal, S.S. Nagalyuk, H. Helava, M.I. Voronova, K.D. Scherbachov, "Status of 3" 6H SiC Bulk Crystal Growth", Materials Science Forum, Vols. 645-648, pp. 25-28, 2010
Online since
April 2010
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Price
$32.00
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