Paper Title:
Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction
  Abstract

The electron backscatter diffraction (EBSD) detector placed inside a commercial scanning electron microscope (SEM) has been used to study of different SiC polytypes. Different growth conditions in chemical vapor deposition (CVD) method were applied to obtain the 3C- and 4H-SiC polytypes epitaxial layers. Growth processes were conducted on the Si-face on-axis 4H-SiC substrates. The growth temperature was in the range of 1300-1620°C and the reactor pressure was 75mbar. The initial C/Si ratio was varied from 0.075 reaching final value of 1.8. It was observed that intentional ramping of the C/Si ratio at the first stage of the growth clearly influences the 4H/3C factor. The growth temperature and ramping of the C/Si ratio were the main parameters to achieve a homogeneous 3C and 4H-SiC epitaxial layers.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
251-254
DOI
10.4028/www.scientific.net/MSF.645-648.251
Citation
K. Kościewicz, W. Strupiński, W. Wierzchowski, K. Wieteska, A. R. Olszyna, "Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction", Materials Science Forum, Vols. 645-648, pp. 251-254, 2010
Online since
April 2010
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Price
$32.00
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