Paper Title:
Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures
  Abstract

Photoluminescence (PL) spectra of 3C-SiC(n,p)/6H-SiC(n) and 3C-SiC(p)/15R-SiC(n) heterostructures have been studied. A broad structureless band, absent in PL spectra of n–n heterostructures, was observed in the spectrum of p–n heterostructures in the energy range 2.2–2.4 eV. It is suggested that this band is due to the presence of a 2D electron gas in a quantum well near the heterointerface. High (~ 4000 cm2/s V) value of electron mobility and the absence of any significant fall in the mobility temperature dependence at liquid-nitrogen temperatures confirm the existence of a 2DEG in the QW at the heterointerface.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
259-262
DOI
10.4028/www.scientific.net/MSF.645-648.259
Citation
A. A. Lebedev, P. L. Abramov, E. V. Bogdanova, S. Y. Davydov, S. P. Lebedev, D. K. Nelson, G. A. Oganesyan, B. S. Razbirin, A. S. Tregubova, "Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures", Materials Science Forum, Vols. 645-648, pp. 259-262, 2010
Online since
April 2010
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