Paper Title:
Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction
  Abstract

We have investigated thermally induced strain in the SiC crystal lattice during physical vapor transport bulk growth. Using high energy x-ray diffraction lattice plane bending was observed in-situ during growth. With increasing growth rate increasing lattice plane bending and, hence, strain was observed. A comparison with numerical modeling of the growth process shows that the latter is related to the heat of crystallization which needs to be dissipated from the crystal growth front. The related temperature gradient as driving force for the dissipation of the heat of crystallization causes lattice plane bending. Optimization of the growth process needs to consider such effects.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
29-32
DOI
10.4028/www.scientific.net/MSF.645-648.29
Citation
R. Hock, K. Konias, L. Perdicaro, A. Magerl, P. Hens, P. J. Wellmann, "Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction", Materials Science Forum, Vols. 645-648, pp. 29-32, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Z.G. Herro, Matthias Bickermann, Boris M. Epelbaum, Pierre M. Masri, Albrecht Winnacker
67
Authors: Shao Ping Wang, Edward M. Sanchez, A. Kopec, M. Zhang, O. Hernandez
51
Authors: Jung Kyu Kim, Kap Ryeol Ku, Dong Jin Kim, Sang Phil Kim, Won Jae Lee, Byoung Chul Shin, Geun Hyoung Lee, Il Soo Kim
Abstract:SiC crystal boules with different shapes were prepared using sublimation physical vapor transport technique (PVT) and then their crystal...
47
Authors: Shigeta Kozawa, Kazuaki Seki, Alexander, Yuji Yamamoto, Toru Ujihara, Yoshikazu Takeda
Abstract:We investigated dislocation behavior in the crystal grown on 6H-SiC (0001) by solution method using synchrotron X-ray topography and thermal...
28
Authors: Tatsuo Fujimoto, Noboru Ohtani, Shinya Sato, Masakazu Katsuno, Hiroshi Tsuge, Wataru Ohashi
Chapter 1: SiC Bulk Growth
Abstract:Sublimation-recrystallization processes occurring during PVT are investigated from the viewpoint of quasi-equilibrium phase transitions of...
21