Paper Title:
Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
  Abstract

Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4H-SiC wafers with extremely low BPD densities (3-4 x 102 cm-2). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
291-294
DOI
10.4028/www.scientific.net/MSF.645-648.291
Citation
M. Dudley, N. Zhang, Y. Zhang, B. Raghothamachar, S. Y. Byrapa, G. Choi, E. K. Sanchez, D. M. Hansen, R. Drachev, M. J. Loboda, "Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density", Materials Science Forum, Vols. 645-648, pp. 291-294, 2010
Online since
April 2010
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