Paper Title:
Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC
  Abstract

Basal Plane Dislocations (BPDs) in SiC are thought to cause degradation of bipolar diodes with blocking voltages > 2kV by triggering the formation and expansion of stacking faults during device operation. Hence, low N doped, thick epitaxial layers without BPDs are urgently needed for the realization of long-term stable SiC bipolar diodes. Such epilayers can be achieved if the conversion of the BPD into another harmless dislocation type is supported by proper epitaxial growth parameters and use of vicinal (off-cut) substrates. In this work, the influence of the substrate’s off-cut angle and of the epilayer thickness on BPD density and surface morphology were investigated. The BPD densities of epilayers grown on 2° and 4° off-cut substrates were very low compared to growth on 8° off-axis substrates. X-Ray Topography has proved that all the Threading Dislocations (TD) propagate from the substrate to the epilayer and that BPDs in the substrate convert to Threading Edge Dislocations (TED) in the epilayer, i.e. the dislocation density (DD) of the substrate determines the epilayer’s DD. The conversion of BPDs is supported by the presence of bunched steps as for growth of thick layers on 2° and 4° off-cut substrates.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
299-302
DOI
10.4028/www.scientific.net/MSF.645-648.299
Citation
B. Kallinger, B. Thomas, S. Polster, P. Berwian, J. Friedrich, "Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC ", Materials Science Forum, Vols. 645-648, pp. 299-302, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Birgit Kallinger, Bernd Thomas, Jochen Friedrich
Abstract:Basal Plane Dislocations (BPD) in SiC are thought to cause degradation of bipolar devices as they can trigger the formation and expansion of...
143
Authors: Rachael L. Myers-Ward, Brenda L. VanMil, Robert E. Stahlbush, S.L. Katz, J.M. McCrate, S.A. Kitt, Charles R. Eddy, D. Kurt Gaskill
Abstract:Epitaxial layers were grown on 4° off-axis 4H-SiC substrates by hot-wall chemical vapor deposition. The reduced off-cut angle resulted in...
105
Authors: Takanori Tanaka, Naoyuki Kawabata, Yoichiro Mitani, Nobuyuki Tomita, Masayoshi Tarutani, Takeharu Kuroiwa, Yoshihiko Toyoda, Masayuki Imaizumi, Hiroaki Sumitani, Satoshi Yamakawa
Chapter 2: SiC Epitaxial Growth
Abstract:SiC epitaxial layer with low basal plane dislocation (BPD) density of 0.2/cm2 was successfully grown under higher C/Si ratio,...
91
Authors: Milan Yazdanfar, Henrik Pedersen, Olof Kordina, Erik Janzén
Chapter 2: SiC Epitaxial Growth
Abstract:The effect of process parameters such as growth temperature, C/Si ratio, etching time, and Si/H2 ratio on dislocation density was...
159
Authors: Keiko Masumoto, Sachiko Ito, Hideto Goto, Hirotaka Yamaguchi, Kentaro Tamura, Chiaki Kudou, Johji Nishio, Kazutoshi Kojima, Toshiyuki Ohno, Hajime Okumura
Chapter 2: SiC Epitaxial Growth
Abstract:We have investigated a conversion of basal plane dislocation (BPD) to threading edge dislocation (TED) in growth of epitaxial layers...
99