Paper Title:
High Quality 100mm 4H-SiC Substrates with Low Resistivity
  Abstract

One of the most crucial defects for the device fabrication on silicon carbide (SiC) substrates are areas with low crystalline quality and micro-pipe clusters which can still occupy several percent of the area in commercial available 4H-substrates. These defects originate from the seed or are generated by modification changes during growth and can be easily detected under crossed polarizers. In this presentation the historic development at SiCrystal from Acheson material to wafers with 100mm diameter, state of the art micro-pipe density and excellent crystalline quality (FWHM < 20 arcsec) on whole area will be shown. Additionally the influence of carbon inclusions on surface quality and the present dislocation densities in 4H substrates will be discussed. While carbon inclusions were reduced to uncritical levels dislocation densities are still in the range of 104 cm-2. Therefore strategies for further reduction will be pointed out. Finally a resistivity limit (16 mΩcm) for stacking fault formation during annealing at 1150°C will be defined.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
3-8
DOI
10.4028/www.scientific.net/MSF.645-648.3
Citation
T. L. Straubinger, E. Schmitt, S. Storm, M. Vogel, A. D. Weber, A. Wohlfart, "High Quality 100mm 4H-SiC Substrates with Low Resistivity", Materials Science Forum, Vols. 645-648, pp. 3-8, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Tomáš Profant, Michal Kotoul
Abstract:A micromechanics study is presented of the matrix cracking of fibres-reinforced ceramic composites when subject to tensile stressing normal...
299
Authors: C. Basceri, I. Khlebnikov, Y. Khlebnikov, P. Muzykov, M. Sharma, G. Stratiy, M. Silan, Cengiz M. Balkas
Abstract:The move towards commercialization of SiC based devices places increasing demands on the quality of the substrate material. While the...
39
Authors: Jawad ul Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, Patrick J. McNally, Erik Janzén
Abstract:We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The...
53
Authors: Tao Song, Xiao Jing Xu, Zhen Fan, Yong Luo, Bin Wang, Gui Chao Wu
Abstract:Equal channel angular pressing (ECAP) of 3003Al ingot has been performed at room temperature, with an imposed equivalent strain of ~0.5 for...
943
Authors: George Martins, Ruy S. Bonilla, Toby Burton, P. MacDonald, Peter R. Wilshaw
Chapter 2: Passivation and Defect Studies in Solar Cells
Abstract:In this work we use Saw Damage Gettering (SDG) in combination with emitter formation to improve the minority carrier lifetime of highly...
126