Paper Title:
Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
  Abstract

Dislocations in highly nitrogen-doped (N > 1×1019 cm-3) low-resistivity ( < 10 mcm) 4H-SiC substrates were investigated by photoluminescence imaging, synchrotron X-ray topography, and defect selective etching using molten KOH. The behavior of dislocations is discussed particularly in terms of their glide motion in the presence of a high concentration of nitrogen. The results indicate that nitrogen impurities up to mid 1019 cm-3 concentration do not show any discernible influence on the glide behavior of basal plane dislocations (BPDs) in 4H-SiC crystals grown by physical vapor transport (PVT) method.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
311-314
DOI
10.4028/www.scientific.net/MSF.645-648.311
Citation
M. Katsuno, N. Ohtani, M. Nakabayashi, T. Fujimoto, H. Yashiro, H. Tsuge, T. Aigo, T. Hoshino, H. Hirano, W. Ohashi, "Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates", Materials Science Forum, Vols. 645-648, pp. 311-314, 2010
Online since
April 2010
Keywords
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$32.00
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