Paper Title:
Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy
  Abstract

The structure of various inclusions in SiC epitaxial layers grown on 4o offcut substrates was investigated using three advanced techniques. Using micro-Raman spectroscopy, the observed inclusions exhibited a complex structure having either different SiC polytypes like 3C or 6H or they were misoriented 4H-SiC inclusions. The UVPL images showed dislocations and other extended defects around the inclusion-related defects, and strain fields were observed in the x-ray topographs near the defect sites. Spectral UVPL imaging shows features with varying luminescence inside the inclusion related defects which propagate and may cause deformation in the crystalline structure and lead to non-radiative recombination centers within the defect.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
315-318
DOI
10.4028/www.scientific.net/MSF.645-648.315
Citation
N. A. Mahadik, R. E. Stahlbush, S. B. Qadri, O. J. Glembocki, D. A. Alexson, R. L. Myers-Ward, J. L. Tedesco, C. R. Eddy, D. K. Gaskill, "Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy", Materials Science Forum, Vols. 645-648, pp. 315-318, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Robert E. Stahlbush, Kendrick X. Liu, Q. Zhang, Joseph J. Sumakeris
Abstract:A non-destructive technique to image the dislocations and other extended defects in SiC epitaxial layers has been developed. Basal plane...
295
Authors: Rachael L. Myers-Ward, Brenda L. VanMil, Robert E. Stahlbush, S.L. Katz, J.M. McCrate, S.A. Kitt, Charles R. Eddy, D. Kurt Gaskill
Abstract:Epitaxial layers were grown on 4° off-axis 4H-SiC substrates by hot-wall chemical vapor deposition. The reduced off-cut angle resulted in...
105
Authors: Robert E. Stahlbush, Rachael L. Myers-Ward, Brenda L. VanMil, D. Kurt Gaskill, Charles R. Eddy
Abstract:The recently developed technique of UVPL imaging has been used to track the path of basal plane dislocations (BPDs) in SiC epitaxial layers. ...
271
Authors: Nadeemullah A. Mahadik, Robert E. Stahlbush, Joshua D. Caldwell, Michael J. O'Loughlin, Albert A. Burk
Chapter 3: Physical Properties and Characterization of SiC
Abstract:The effect of extended defects on carrier lifetime was investigated in 140 um thick 4H-SiC epilayers using whole wafer ultraviolet...
297
Authors: Patrick Berwian, Daniel Kaminzky, Katharina Roßhirt, Birgit Kallinger, Jochen Friedrich, Steffen Oppel, Adrian Schneider, Michael Schütz
Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials
Abstract:A new tool for characterizing extended defects in Silicon Carbide (SiC) based on photoluminescence imaging is presented. In contrast to other...
484