Paper Title:
Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers
  Abstract

Time-dependent evolutions of single and quadruple Shockley stacking faults (sSSF and 4SSF) in 4° off 4H-SiC epitaxial layers have been investigated. UV illuminations using an Hg-Xe lamp light source generate dissociations of basal plane dislocations (BPDs) into sSSFs whereas for 4SSFs no significant changes in shape occur. Detailed analyses of Photo-luminescence (PL) signals suggest that Si- and C-core partials have different PL spectrum distributions in the wavelength range larger than 750 nm, giving rise to images with different contrasts in PL mappings.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
319-322
DOI
10.4028/www.scientific.net/MSF.645-648.319
Citation
T. Fujimoto, T. Aigo, M. Nakabayashi, S. Satoh, M. Katsuno, H. Tsuge, H. Yashiro, H. Hirano, T. Hoshino, W. Ohashi, "Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers", Materials Science Forum, Vols. 645-648, pp. 319-322, 2010
Online since
April 2010
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