Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process
| Periodical | Materials Science Forum (Volumes 645 - 648) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 323-326 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.323 |
| Citation | Masahiro Nagano et al., 2010, Materials Science Forum, 645-648, 323 |
| Online since | April, 2010 |
| Authors | Masahiro Nagano, Hidekazu Tsuchida, Takuma Suzuki, Tetsuo Hatakeyama, Junji Senzaki, Kenji Fukuda |
| Keywords | Device Process |
| Price | US$ 28,- |
Condition dependences of defect formation in 4H-SiC epilayer induced by the implantation/annealing process were investigated using synchrotron reflection X-ray topography and transmission electron microscopy. Nitrogen, phosphorus or aluminum ions were implanted in the 4H-SiC epilayers and then activation annealing was performed. To compare the implantation/annealing process, a sample receiving only the annealing treatment without the implantation was also performed. Two different crucibles (conventional and improved) were used in the annealing process. The formation of single layer Shockley-type stacking faults near the surface was found to have no ion-implantation condition or crucible dependence. The formation of BPD half-loops and the glide of pre-existing BPDs showed clear dependence on the crucibles.
