Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process
|Periodical||Materials Science Forum (Volumes 645 - 648)|
|Main Theme||Silicon Carbide and Related Materials 2009|
|Edited by||Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller|
|Citation||Masahiro Nagano et al., 2010, Materials Science Forum, 645-648, 323|
|Online since||April, 2010|
|Authors||Masahiro Nagano, Hidekazu Tsuchida, Takuma Suzuki, Tetsuo Hatakeyama, Junji Senzaki, Kenji Fukuda|
Condition dependences of defect formation in 4H-SiC epilayer induced by the implantation/annealing process were investigated using synchrotron reflection X-ray topography and transmission electron microscopy. Nitrogen, phosphorus or aluminum ions were implanted in the 4H-SiC epilayers and then activation annealing was performed. To compare the implantation/annealing process, a sample receiving only the annealing treatment without the implantation was also performed. Two different crucibles (conventional and improved) were used in the annealing process. The formation of single layer Shockley-type stacking faults near the surface was found to have no ion-implantation condition or crucible dependence. The formation of BPD half-loops and the glide of pre-existing BPDs showed clear dependence on the crucibles.