Paper Title:
Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process
  Abstract

Condition dependences of defect formation in 4H-SiC epilayer induced by the implantation/annealing process were investigated using synchrotron reflection X-ray topography and transmission electron microscopy. Nitrogen, phosphorus or aluminum ions were implanted in the 4H-SiC epilayers and then activation annealing was performed. To compare the implantation/annealing process, a sample receiving only the annealing treatment without the implantation was also performed. Two different crucibles (conventional and improved) were used in the annealing process. The formation of single layer Shockley-type stacking faults near the surface was found to have no ion-implantation condition or crucible dependence. The formation of BPD half-loops and the glide of pre-existing BPDs showed clear dependence on the crucibles.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
323-326
DOI
10.4028/www.scientific.net/MSF.645-648.323
Citation
M. Nagano, H. Tsuchida, T. Suzuki, T. Hatakeyama, J. Senzaki, K. Fukuda, "Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process", Materials Science Forum, Vols. 645-648, pp. 323-326, 2010
Online since
April 2010
Keywords
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2.2 Point and Extended Defects
Abstract:We investigated the effect of the basal plane dislocation (BPD) density in 4H-silicon carbide (SiC) substrates on the forward voltage...
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