Paper Title:
Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
  Abstract

An extended structural defects which locally drastically reduces the carrier lifetime, has been observed in as-grown epilayers. A combination of back polishing, etching in molten KOH and optical microscopy revealed the geometrical structure of the stacking fault inside the epilayer. The fault started close to the epi-substrate interface, expanded initially rapidly but changed geometry after some time and reduced in size during further growth. The optical spectrum as well as the temperature dependence from this fault is identical to the emission from the single Shockley stacking faults previously only observed and formed in the bipolar diodes during forward voltage operation.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
327-330
DOI
10.4028/www.scientific.net/MSF.645-648.327
Citation
J. ul Hassan, P. Bergman, "Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers", Materials Science Forum, Vols. 645-648, pp. 327-330, 2010
Online since
April 2010
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