Solution Growth and Crystallinity Characterization of Bulk 6H-SiC
| Periodical | Materials Science Forum (Volumes 645 - 648) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 33-36 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.33 |
| Citation | Nobuyoshi Yashiro et al., 2010, Materials Science Forum, 645-648, 33 |
| Online since | April, 2010 |
| Authors | Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Akihiro Yauchi |
| Keywords | Bulk Crystal Growth, Etch-Pit-Density, Liquid Phase Epitaxy (LPE) |
| Price | US$ 28,- |
The stable long time growth with the use of Si -C-Ti ternary solution was realized by improving the thermal condition during the growth. We have succeeded in obtaining a maximum 10 mm thick bulk 6H-SiC crystal, which is the largest bulk crystal ever obtained by the solution growth technique. The obtained crystal was free of cracks and exhibited a homogeneous light green color. The crystallinity of the grown crystal was characterized by X-ray rocking curve measurements using (0006) reflection and by the molten KOH etching. The mapping of the full width at half maximum (FWHM) revealed the average FWHM around 30 arc seconds and the minimal FWHM under 16 arc seconds. The etch pit density (EPD) was typically in the range between 104 and 105 cm-2, which was comparable to that of the crystal seed.
