Paper Title:
Solution Growth and Crystallinity Characterization of Bulk 6H-SiC
  Abstract

The stable long time growth with the use of Si -C-Ti ternary solution was realized by improving the thermal condition during the growth. We have succeeded in obtaining a maximum 10 mm thick bulk 6H-SiC crystal, which is the largest bulk crystal ever obtained by the solution growth technique. The obtained crystal was free of cracks and exhibited a homogeneous light green color. The crystallinity of the grown crystal was characterized by X-ray rocking curve measurements using (0006) reflection and by the molten KOH etching. The mapping of the full width at half maximum (FWHM) revealed the average FWHM around 30 arc seconds and the minimal FWHM under 16 arc seconds. The etch pit density (EPD) was typically in the range between 104 and 105 cm-2, which was comparable to that of the crystal seed.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
33-36
DOI
10.4028/www.scientific.net/MSF.645-648.33
Citation
N. Yashiro, K. Kusunoki, K. Kamei, A. Yauchi, "Solution Growth and Crystallinity Characterization of Bulk 6H-SiC", Materials Science Forum, Vols. 645-648, pp. 33-36, 2010
Online since
April 2010
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Price
$32.00
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