Paper Title:
Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes
  Abstract

The influence of stacking fault (SF) generation on the reverse blocking characteristics has been investigated on SiC 10 kV, 5 A Merged PiN (MPS) diodes. For the first time, we have observed that the generation of SFs under forward biased stress increases the reverse leakage current. In addition, the presence of a secondary diode formed by the electrical stress was observed and attributed to the breakdown voltage failure on certain devices.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
331-334
DOI
10.4028/www.scientific.net/MSF.645-648.331
Citation
Q. C. J. Zhang, A. K. Agarwal, A. A. Burk, M. J. O'Loughlin, J. W. Palmour, R. E. Stahlbush, C. Scozzie, "Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes", Materials Science Forum, Vols. 645-648, pp. 331-334, 2010
Online since
April 2010
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Price
$32.00
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Authors: Birgit Kallinger, Patrick Berwian, Jochen Friedrich, Christian Hecht, Dethard Peters, Peter Friedrichs, Bernd Thomas
Chapter 10: Device and Application
Abstract:4H-SiC PiN diodes for 6.5 kV were manufactured on both 4° and 8° off-cut substrates and subjected to an electrical stress test on wafer level...
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