Paper Title:

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

Periodical Materials Science Forum (Volumes 645 - 648)
Main Theme Silicon Carbide and Related Materials 2009
Edited by Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages 331-334
DOI 10.4028/www.scientific.net/MSF.645-648.331
Citation Qing Chun Jon Zhang et al., 2010, Materials Science Forum, 645-648, 331
Online since April, 2010
Authors Qing Chun Jon Zhang, Anant K. Agarwal, Albert A. Burk, Michael J. O'Loughlin, John W. Palmour, Robert E. Stahlbush, Charles J. Scozzie
Keywords Bipolar Diode, Electrical Stress, Stacking Fault
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Abstract

The influence of stacking fault (SF) generation on the reverse blocking characteristics has been investigated on SiC 10 kV, 5 A Merged PiN (MPS) diodes. For the first time, we have observed that the generation of SFs under forward biased stress increases the reverse leakage current. In addition, the presence of a secondary diode formed by the electrical stress was observed and attributed to the breakdown voltage failure on certain devices.