Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes
| Periodical | Materials Science Forum (Volumes 645 - 648) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 331-334 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.331 |
| Citation | Qing Chun Jon Zhang et al., 2010, Materials Science Forum, 645-648, 331 |
| Online since | April, 2010 |
| Authors | Qing Chun Jon Zhang, Anant K. Agarwal, Albert A. Burk, Michael J. O'Loughlin, John W. Palmour, Robert E. Stahlbush, Charles J. Scozzie |
| Keywords | Bipolar Diode, Electrical Stress, Stacking Fault |
| Price | US$ 28,- |
The influence of stacking fault (SF) generation on the reverse blocking characteristics has been investigated on SiC 10 kV, 5 A Merged PiN (MPS) diodes. For the first time, we have observed that the generation of SFs under forward biased stress increases the reverse leakage current. In addition, the presence of a secondary diode formed by the electrical stress was observed and attributed to the breakdown voltage failure on certain devices.