Paper Title:
Dislocation Activity in 4H-SiC in the Brittle Domain
  Abstract

Results of deformation experiments on 4H-SiC single crystals below the usual brittle to ductile transition temperature are reported and discussed in comparison of previous literature data. Si-core and C-core partials are evidenced in the basal plane, and perfect dislocations are also observed on other crystallographic planes. These results could indicate that dislocation activity under high stress is more complex than expected.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
335-338
DOI
10.4028/www.scientific.net/MSF.645-648.335
Citation
J. L. Demenet, M. Amer, A. Mussi, J. Rabier, "Dislocation Activity in 4H-SiC in the Brittle Domain", Materials Science Forum, Vols. 645-648, pp. 335-338, 2010
Online since
April 2010
Keywords
TEM
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Price
$32.00
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