Paper Title:
Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
  Abstract

The correlation between leakage current and stacking fault (SF) density in p-n diodes fabricated on 3C-SiC homo-epitaxial layer is investigated. The leakage current density at reverse bias strongly depends on the SF density; an increase of one order of magnitude in the SF density enhances the leakage current by five orders of magnitude at a reverse bias of 400 V. In order to obtain commercially suitable MOSFETs with 10-4Acm-2 at 600V, the SF density has to be reduced below 6×104 cm-2. Photoemission caused by hot electrons, which travel along a leakage path, can be observed at the crossing between a SF and the edge of p-well region; where the maximum electric field is induced. The mechanism of the leakage current is discussed in detail in a separate paper.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
339-342
DOI
10.4028/www.scientific.net/MSF.645-648.339
Citation
T. Kawahara, N. Hatta , K. Yagi, H. Uchida, M. Kobayashi, M. Abe, H. Nagasawa, B. Zippelius, G. Pensl, "Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC", Materials Science Forum, Vols. 645-648, pp. 339-342, 2010
Online since
April 2010
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Price
$32.00
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