Paper Title:
6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers
  Abstract

A new type of 6H zigzag faults has been identified from high resolution transmission electron microscopy (HRTEM) measurements performed on low-doped 4H-SiC homoepitaxial layer grown on off-axis substrates in a hot-wall CVD reactor. They are made of half unit cells of 6H with corresponding low temperature photoluminescence (LTPL) response ranging from about 3 eV to 2.5 eV at liquid helium temperature.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
347-350
DOI
10.4028/www.scientific.net/MSF.645-648.347
Citation
T. Robert, M. Marinova, S. Juillaguet, A. Henry, E. K. Polychroniadis, J. Camassel, "6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers", Materials Science Forum, Vols. 645-648, pp. 347-350, 2010
Online since
April 2010
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Price
$32.00
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