Paper Title:
Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates
  Abstract

Raman spectroscopy was applied to investigate a series of SiC films grown on Si and 6H-SiC substrates by a new method of solid gas phase epitaxy. During the growth characteristic voids are formed in Si at the SiC/Si interface. Raman peak position, intensity and linewidth were used to characterize the quality and the polytype structure of the SiC layers. A large enhancement in the peak intensity of the transverse optical and longitudinal optical phonon modes of SiC is observed for the Raman signal measured at the voids. In addition, scanning electron microscopy and atomic force microscopy were used to investigate the surface morphology of SiC layers.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
359-362
DOI
10.4028/www.scientific.net/MSF.645-648.359
Citation
J. Wasyluk, T. S. Perova, S. A. Kukushkin, A. V. Osipov, N. A. Feoktistov, S. A. Grudinkin, "Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates", Materials Science Forum, Vols. 645-648, pp. 359-362, 2010
Online since
April 2010
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Price
$32.00
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