Paper Title:
Macrodefects in Cubic Silicon Carbide Crystals
  Abstract

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
375-378
DOI
10.4028/www.scientific.net/MSF.645-648.375
Citation
V. Jokubavicius, J. Palisaitis, R. Vasiliauskas, R. Yakimova, M. Syväjärvi, "Macrodefects in Cubic Silicon Carbide Crystals", Materials Science Forum, Vols. 645-648, pp. 375-378, 2010
Online since
April 2010
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Price
$32.00
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