Paper Title:
Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy
  Abstract

Microstructures of switch-back epitaxy cubic silicon carbide (3C-SiC) before and after Al ion implantation were investigated by transmission electron microscopy (TEM). Stacking faults aligned along the {111} were observed in 3C-SiC. A surface bulge was observed in some regions and planar defects were observed under the bulge region. After ion implantation of 3C-SiC, defects were observed to be distributed up to a depth approximately 500 nm from the surface.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
379-382
DOI
10.4028/www.scientific.net/MSF.645-648.379
Citation
B. Chayasombat, Y. Kimata, T. Kato, T. Tokunaga, K. Sasaki, K. Kuroda, "Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy", Materials Science Forum, Vols. 645-648, pp. 379-382, 2010
Online since
April 2010
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Price
$32.00
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