Paper Title:
TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
  Abstract

In the present work the defects appearing in layers grown by liquid phase epitaxy on different substrates are compared. The used seeds were (i) 3C-SiC with (111) orientation, grown heteroepitaxially on (0001) 4H-SiC or 6H-SiC substrates by continuous feed physical vapour transport process and the vapour-liquid-solid mechanism, respectively, and (ii) 3C-SiC wafer with (100) orientation from HOYA. The structural and optical investigation showed that (i) on the (111) substrates, due to the appearance of silicon and 6H-SiC inclusions, a layer which consisted of a sequence of long period polytypes was formed. The dominant polytype formed was 21R-SiC, which after successive transformation to 39R- and 57R- SiC led to the formation of 6H-SiC on the top of the layer. (ii) On the (100) substrates, a 3C-SiC layer with comparatively uniform defect density was formed. The main defects were stacking faults and their density was reducing during the process.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
383-386
DOI
10.4028/www.scientific.net/MSF.645-648.383
Citation
M. Marinova, G. Zoulis, T. Robert, F. Mercier, A. Mantzari, I. G. Galben-Sandulache, O. Kim-Hak, J. Lorenzzi, S. Juillaguet, D. Chaussende, G. Ferro, J. Camassel, E. K. Polychroniadis, "TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds", Materials Science Forum, Vols. 645-648, pp. 383-386, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: C. Basceri, I. Khlebnikov, Y. Khlebnikov, P. Muzykov, M. Sharma, G. Stratiy, M. Silan, Cengiz M. Balkas
Abstract:The move towards commercialization of SiC based devices places increasing demands on the quality of the substrate material. While the...
39
Authors: Jawad ul Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, Patrick J. McNally, Erik Janzén
Abstract:We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The...
53
Authors: Thomas L. Straubinger, Erwin Schmitt, S. Storm, Michael Vogel, Arnd Dietrich Weber, Andreas Wohlfart
Abstract:One of the most crucial defects for the device fabrication on silicon carbide (SiC) substrates are areas with low crystalline quality and...
3
Authors: Zhong Yang, Ya Zheng Liu, Le Yu Zhou, Guo Wei Li, Dan Zhang
Biomaterials
Abstract:Defect in surface induction hardening layer at the eccentric axle neck of C38N2 automobile engine crankshaft was investigated. Fracture...
1648
Authors: Hong Xia Mou, Xin Hua Li, Sai Tang Liu
Chapter 1: Materials Science and Engineering
Abstract:The mechanism of formation of the large-dimension rare-earth(RE) inclusions in steels is discussed by TEM(Transmission Electron Microscope)...
288