Paper Title:
TEM and SEM-CL Studies of SiC Nanowires
  Abstract

-SiC and -SiC/SiO2 core-shell nanowires (NWs) grown on silicon substrates by three different processes, based on the use of i) carbon monoxide, ii) silane with propane and iii) carbon tetrachloride precursors, are analysed by structural and optical techniques. Spectroscopic cathodoluminescence studies show a luminescence enhancement in core-shell structures, ascribed to an effective role of the shell as both carrier injecting barrier and passivation layer. In NWs grown using CCl4 precursor, a peculiar luminescence with dominant red component at about 2 eV has been detected and ascribed to point defects related to an unintentional oxygen incorporation.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
387-390
DOI
10.4028/www.scientific.net/MSF.645-648.387
Citation
F. Rossi, F. Fabbri, G. Attolini, M. Bosi, B. E. Watts, G. Salviati, "TEM and SEM-CL Studies of SiC Nanowires", Materials Science Forum, Vols. 645-648, pp. 387-390, 2010
Online since
April 2010
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Price
$32.00
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