Paper Title:
Theory of Neutral Divacancy in SiC: A Defect for Spintronics
  Abstract

We investigate the neutral divacancy in SiC by means of first principles calculations and group theory analysis. We identify the nature of the PL transitions associated with this defect. We show that how the spin state may be manipulated optically in this defect.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
395-397
DOI
10.4028/www.scientific.net/MSF.645-648.395
Citation
A. Gali, A. Gällström, N. T. Son, E. Janzén, "Theory of Neutral Divacancy in SiC: A Defect for Spintronics", Materials Science Forum, Vols. 645-648, pp. 395-397, 2010
Online since
April 2010
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