Paper Title:
The Carbon Vacancy Related EI4 Defect in 4H-SiC
  Abstract

Electron paramagnetic resonance (EPR) was used to study high-purity semi-insulating 4H-SiC irradiated with 2 MeV electrons at room temperature. The EPR signal of the EI4 defect was found to be dominating in samples irradiated and annealed at ~750°C. Additional large-splitting 29Si hyperfine (hf) lines and also other 13C and 29Si hf structures were observed. Based on the observed hf structures and annealing behaviour, the complex between a negative carbon vacancy-carbon antisite pair (VCCSi–) and a distance positive carbon vacancy ( ) is tentatively proposed as a possible model for the EI4 defect.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
399-402
DOI
10.4028/www.scientific.net/MSF.645-648.399
Citation
N. T. Son, P. Carlsson, J. Isoya, N. Morishita, T. Ohshima, B. Magnusson, E. Janzén, "The Carbon Vacancy Related EI4 Defect in 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 399-402, 2010
Online since
April 2010
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Price
$32.00
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