Paper Title:
Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC
  Abstract

In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new EPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652•10-4 cm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit contribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal axis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin-orbit coup¬ling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
403-406
DOI
10.4028/www.scientific.net/MSF.645-648.403
Citation
A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, U. Gerstmann, "Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC", Materials Science Forum, Vols. 645-648, pp. 403-406, 2010
Online since
April 2010
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