Paper Title:
New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC
  Abstract

In this paper we revisit sharp low temperature luminescence lines (LTPL) previously generated by high dose 1018 to 1020 cm-2 electron beams in an electron microscope and now produced by low dose 1015 cm-2 electron, 5x1010 cm-2 proton and helium ion irradiation. New no phonon lines E0, F0, θ0, Φ0, K0, G0, J0, M0 and phonon replicas are found. Phonon replicas up to the fifth harmonic are well accounted for by theory giving convincing new evidence that the di-carbon antisite is responsible for these deep defect lines.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
411-414
DOI
10.4028/www.scientific.net/MSF.645-648.411
Citation
F. Yan, R. P. Devaty, W. J. Choyke, T. Kimoto, T. Ohshima, G. Pensl, A. Gali, "New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC", Materials Science Forum, Vols. 645-648, pp. 411-414, 2010
Online since
April 2010
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Price
$32.00
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