Paper Title:
LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
  Abstract

Ga-doped 3C-SiC layers have been grown on on-axis 6H-SiC (0001) substrates by the VLS technique and investigated by low temperature photoluminescence (LTPL) measurements. On these Ga-doped samples, all experimental spectra collected at 5K were found dominated by strong N-Ga donor-acceptor pair (DAP) transitions and phonon replicas. As expected, the N-Ga DAP zero-phonon line (ZPL) was located at lower energy (~ 86 meV) below the N-Al one. Fitting the transition energies for the N-Al close DAP lines gave 251 meV for the Al acceptor binding energy in 3C-SiC and, by comparison, 337 meV for the Ga acceptor one.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
415-418
DOI
10.4028/www.scientific.net/MSF.645-648.415
Citation
J. W. Sun, G. Zoulis, J. Lorenzzi, N. Jegenyes, S. Juillaguet, H. Peyre, V. Soulière, G. Ferro, F. Milesi, J. Camassel, "LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates", Materials Science Forum, Vols. 645-648, pp. 415-418, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ivan G. Ivanov, Alexsandre Ellison, Erik Janzén
321
Authors: Sang Youl Lee, Kwang Joon Hong
Abstract:The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and...
1306
Authors: Nguyen Tien Son, Patrick Carlsson, Andreas Gällström, Björn Magnusson, Erik Janzén
Abstract:Semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range 5.5×1015 –1.1×1017 cm–3 were studied by electron paramagnetic...
401
Authors: Shiau Lu Yao, Jhen Dong Hong, Chung Yen Ho, Ching Ting Lee, Day Shan Liu
Abstract:Cosputtered aluminum nitride-zinc oxide (AlN-ZnO) films at a theoretical atomic ratio of 10% [Al / (Al + Zn) at.%] were postannealed at 450°C...
716