Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
This paper comprises a systematic study of the thermal stability of defect centers observed in n- and p-type 4H-SiC by deep level transient spectroscopy (DLTS); the defects are generated by irradiation with high-energy electrons of 170 keV or 1 MeV.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
S. A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno, G. Alfieri, T. Kimoto, S. Onoda, T. Ohshima, F. Yan, R. P. Devaty, W. J. Choyke, "Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons", Materials Science Forum, Vols. 645-648, pp. 423-426, 2010