Paper Title:
Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
  Abstract

This paper comprises a systematic study of the thermal stability of defect centers observed in n- and p-type 4H-SiC by deep level transient spectroscopy (DLTS); the defects are generated by irradiation with high-energy electrons of 170 keV or 1 MeV.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
423-426
DOI
10.4028/www.scientific.net/MSF.645-648.423
Citation
S. A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno, G. Alfieri, T. Kimoto, S. Onoda, T. Ohshima, F. Yan, R. P. Devaty, W. J. Choyke, "Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons", Materials Science Forum, Vols. 645-648, pp. 423-426, 2010
Online since
April 2010
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Price
$32.00
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