Paper Title:
Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers
  Abstract

Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped He+-profile. Admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) were employed to search for defect centers. AS spectra of as-grown as well as of electron-irradiated (170 keV or 1 MeV) 4H-SiC epilayers reveal the Al acceptor (ΔE(Al) = 200 meV) and an unknown defect (ΔE(SB) = 177 meV), while AS spectra of the He+-implanted and annealed sample show in addition to the Al-acceptor two energetically deeper acceptor-like defect centers (ΔE(RE3) = 255 meV and ΔE(KR3) = 375 meV). The KR3-center is not directly formed by the He+-implantation, it requires an annealing process. The DLTS spectra of the He+-implanted and annealed sample resolve a double-peak structure of the KR3-defect (ΔE(KR3A) = 380 meV and ΔE(KR3B) = 410 meV).

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
427-430
DOI
10.4028/www.scientific.net/MSF.645-648.427
Citation
S. Beljakowa, S. A. Reshanov, B. Zippelius, M. Krieger, G. Pensl, K. Danno, T. Kimoto, S. Onoda, T. Ohshima, F. Yan, R. P. Devaty, W. J. Choyke, "Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers", Materials Science Forum, Vols. 645-648, pp. 427-430, 2010
Online since
April 2010
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