Paper Title:
A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation
  Abstract

4H-SiC has been irradiated with 10 keV protons and a laterally resolved DLTS study performed to study the diffusion of irradiation induced intrinsic point defects. It is found that the defects migrate on the order of hundreds of μm laterally and carbon interstitials (CI) are believed to be involved in the defect formation. However, the vertical diffusion lengths are revealed to be several orders of magnitude shorter, on the order of hundreds of nm. Specifically, the Z1,2, S1,2 and EH6,7 levels are found to be generated significant distances from the irradiated area, suggesting that CI or another highly mobile species are involved in the formation of these defects.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
431-434
DOI
10.4028/www.scientific.net/MSF.645-648.431
Citation
L. S. Løvlie, L. Vines, B. G. Svensson, "A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation", Materials Science Forum, Vols. 645-648, pp. 431-434, 2010
Online since
April 2010
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$32.00
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