Paper Title:
Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC
  Abstract

After low-energy electron irradiation of epitaxial n-type 4H-SiC, the DLTS peak amplitudes of the defects Z1/2 and EH6/7, which were already observed in as-grown layers, increased and the commonly found peaks EH1 and EH3 appeared. The bistable M-center, previously seen in high-energy proton implanted 4H-SiC, was detected. New bistable defects, the EB-centers, evolved after annealing out of the M-center, EH1 and EH3. The reconfiguration energies for one of the two EB-centers were determined to be about 0.96 eV for both transitions: from configuration I to II and from configuration II to I. Since low-energy electron irradiation (<220 keV) affects mainly the carbon atom in SiC, both the M- and EB-centers are likely to be carbon related defects.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
435-438
DOI
10.4028/www.scientific.net/MSF.645-648.435
Citation
F. C. Beyer, C. G. Hemmingsson, H. Pedersen, A. Henry, J. Isoya, N. Morishita, T. Ohshima, E. Janzén, "Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 435-438, 2010
Online since
April 2010
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$32.00
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