Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons |
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| Journal | Materials Science Forum (Volumes 645 - 648) |
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| Volume | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 439-442 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.439 |
| Citation | Michael Weidner et al., 2010, Materials Science Forum, 645-648, 439 |
| Online since | April, 2010 |
| Authors | Michael Weidner, Lia Trapaidze, Gerhard Pensl, Sergey A. Reshanov, Adolf Schöner, Hisayoshi Itoh, Takeshi Ohshima, Tsunenobu Kimoto |
| Keywords | Deep Level Transient Spectroscopy |
| Abstract | Intrinsic defects in 3C-SiC are generated by implantation of H+- and He+-ions or irra¬diation with high energy electrons. The defect parameters and the thermal stability of the observed defects are determined. The capture-cross-section of the W6-center is directly measured by variation of the filling pulse length. The charge state of the W6-center is obtained from double-correlated DLTS investigations according to the Poole-Frenkel effect. |
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