Paper Title:
Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons
  Abstract

Intrinsic defects in 3C-SiC are generated by implantation of H+- and He+-ions or irra¬diation with high energy electrons. The defect parameters and the thermal stability of the observed defects are determined. The capture-cross-section of the W6-center is directly measured by variation of the filling pulse length. The charge state of the W6-center is obtained from double-correlated DLTS investigations according to the Poole-Frenkel effect.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
439-442
DOI
10.4028/www.scientific.net/MSF.645-648.439
Citation
M. Weidner, L. Trapaidze, G. Pensl, S. A. Reshanov, A. Schöner, H. Itoh, T. Ohshima, T. Kimoto, "Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons", Materials Science Forum, Vols. 645-648, pp. 439-442, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Atsuo Kawasuso, Masahito Yoshikawa, Masaki Maekawa, Hisayoshi Itoh, Toshinobu Chiba, F. Redmann, Reinhard Krause-Rehberg, Michael Weidner, Thomas Frank, Gerhard Pensl
477
Authors: Vitalii V. Kozlovski, Elena V. Bogdanova, Valentin V. Emtsev, Konstantin V. Emtsev, Alexander A. Lebedev, V.N. Lomasov
Abstract:A comparison study of radiation damage in n-type silicon grown by the floating zone technique and n-type silicon carbide grown by the...
385
Authors: Marie France Barthe, L. Henry, S. Arpiainen, G. Blondiaux
Abstract:This paper presents positron lifetime results which give information on the nature of vacancy defects induced by electron irradiation in...
473
Authors: Y.J. Zhang, A.H. Deng, You Wen Zhao, J. Yu, X.X. Yu, X. Cheng, Y.L. Zhou, J.J. Long
Abstract:Positron annihilation lifetime (PAL) spectroscopy,photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC)...
134
Authors: N. Chuchvaga, E. Bogdanova, A. Strelchuk, Evgenia V. Kalinina, D.B. Shustov, M. Zamoryanskaya, V. Shkuratov
Chapter 7: Electrical and Structural Characterization
Abstract:A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions...
625