Paper Title:
Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process
| Periodical | Materials Science Forum (Volumes 645 - 648) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 45-48 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.45 |
| Citation | Mamoru Imade et al., 2010, Materials Science Forum, 645-648, 45 |
| Online since | April, 2010 |
| Authors | Mamoru Imade, Shin Takeuchi, Masahiro Uemura, Masashi Yoshimura, Yasuo Kitaoka, Takatomo Sasaki, Yusuke Mori, Shinroh Itoh, Hiroyuki Okuda, Masanobu Yamazaki |
| Keywords | Liquid Phase Epitaxy (LPE), Vapor-Liquid-Solid Growth |
| Price | US$ 28,- |
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Abstract
We attempted the vapor–liquid–solid (VLS) growth of SiC film in Si-Li solution using gaseous CH4 as a carbon source at 900 oC. A 100-m-thick liquid-phase epitaxy (LPE) layer was obtained on a 4H-SiC (0001) substrate under CH4 pressure of 0.9 MPa. X-ray diffraction (XRD) and a high-resolution transmission electron microscope (HR-TEM) measurement showed that the LPE layer was single-phase 2H-SiC. We concluded that VLS growth in Si-Li solution using gaseous CH4 as a carbon source is useful for growing single-phase 2H-SiC.
