Paper Title:
Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process
  Abstract

We attempted the vapor–liquid–solid (VLS) growth of SiC film in Si-Li solution using gaseous CH4 as a carbon source at 900 oC. A 100-m-thick liquid-phase epitaxy (LPE) layer was obtained on a 4H-SiC (0001) substrate under CH4 pressure of 0.9 MPa. X-ray diffraction (XRD) and a high-resolution transmission electron microscope (HR-TEM) measurement showed that the LPE layer was single-phase 2H-SiC. We concluded that VLS growth in Si-Li solution using gaseous CH4 as a carbon source is useful for growing single-phase 2H-SiC.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
45-48
DOI
10.4028/www.scientific.net/MSF.645-648.45
Citation
M. Imade, S. Takeuchi, M. Uemura, M. Yoshimura, Y. Kitaoka, T. Sasaki, Y. Mori, S. Itoh, H. Okuda, M. Yamazaki, "Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process", Materials Science Forum, Vols. 645-648, pp. 45-48, 2010
Online since
April 2010
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$32.00
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