Paper Title:
Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC
  Abstract

We report on the electrical characterization of high-purity semi-insulating 4H-SiC after annealing at temperatures between room temperature and 1700 oC by current-mode deep level transient spectroscopy (I-DLTS). I-V and Hall-effect measurements revealed that the investigated substrates possess p-type conductivity. Four deep levels were detected by I-DLTS with activation energies in the 0.15-1.29 eV range. We studied their thermal stability as well as their stability with respect to light illumination.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
455-458
DOI
10.4028/www.scientific.net/MSF.645-648.455
Citation
G. Alfieri, T. Kimoto, G. Pensl, "Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 455-458, 2010
Online since
April 2010
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Price
$32.00
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