Paper Title:
Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films
  Abstract

We produce amorphous terbium doped wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1 x(AlN)x by rf triple magnetron sputtering. Cathodoluminescence measurements performed at samples having different compositions x show pronounced intra 4f shell transition peaks of the trivalent terbium. Thermal activation of the terbium emission by isochronal annealing of the films leads to a strong increase in emission intensity.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
459-462
DOI
10.4028/www.scientific.net/MSF.645-648.459
Citation
O. Erlenbach, G. Gálvez, J. A. Guerra, F. De Zela, R. Weingärtner, A. Winnacker, "Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films", Materials Science Forum, Vols. 645-648, pp. 459-462, 2010
Online since
April 2010
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Price
$32.00
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