Paper Title:
SiC and GaN MOS Interfaces – Similarities and Differences
  Abstract

We have comparatively characterized the electrical characteristics of 4H-SiC and 2H-GaN MOS capacitors and FETs. While progressive refinement of gate oxide processes, notably with NO anneal, has resulted in better threshold voltage control, reduced subthreshold slope and higher field-effect mobility for 4H-SiC MOSFETs, we have recently reported more superior MOS parameters for 2H-GaN MOSFETs. In addition, we have performed MOS-gated Hall measurements to extract the intrinsic carrier concentration and MOS mobility, indicating that both less channel electron trapping and scattering take place in 2H-GaN MOSFETs.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
473-478
DOI
10.4028/www.scientific.net/MSF.645-648.473
Citation
T. P. Chow, "SiC and GaN MOS Interfaces – Similarities and Differences", Materials Science Forum, Vols. 645-648, pp. 473-478, 2010
Online since
April 2010
Authors
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Price
$32.00
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